Stock:
Distributor: 135
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 20.46000 | ₹ 20,46,000.00 |
| 10000 | ₹ 24.42000 | ₹ 2,44,200.00 |
| 1000 | ₹ 27.39000 | ₹ 27,390.00 |
| 500 | ₹ 29.70000 | ₹ 14,850.00 |
| 100 | ₹ 33.00000 | ₹ 3,300.00 |
Stock:
Distributor: 160
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 20.46000 | ₹ 20,46,000.00 |
| 10000 | ₹ 24.42000 | ₹ 2,44,200.00 |
| 1000 | ₹ 27.39000 | ₹ 27,390.00 |
| 500 | ₹ 29.70000 | ₹ 14,850.00 |
| 100 | ₹ 33.00000 | ₹ 3,300.00 |
Stock:
Distributor: 111
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 100000 | ₹ 25.58000 | ₹ 25,58,000.00 |
| 10000 | ₹ 30.53000 | ₹ 3,05,300.00 |
| 1000 | ₹ 34.25000 | ₹ 34,250.00 |
| 900 | ₹ 37.12000 | ₹ 33,408.00 |
Stock:
Distributor: 121
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 1 | ₹ 42.78000 | ₹ 42.78 |
| 10 | ₹ 37.27000 | ₹ 372.70 |
| 100 | ₹ 34.02000 | ₹ 3,402.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | NexFET™ | |
| IC Encapsulation Type | Tape & Reel (TR)Bulk | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 P-Channel (Dual) | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 20V | |
| Continuous Drain Current at 25C | 1.2A | |
| Max On-State Resistance | 100mOhm @ 1A, 4.5V | |
| Max Threshold Gate Voltage | 1V @ 250µA | |
| Max Gate Charge at Vgs | 2.1nC @ 4.5V | |
| Max Input Cap at Vds | 195pF @ 10V | |
| Maximum Power Handling | 800mW | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-UFBGA, DSBGA | |
| Vendor Package Type | 6-DSBGA (1x1.5) |
Description
Configured in a manner identified as 2 P-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 1.2A at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Offers FET traits classified as Logic Level Gate. Ensures maximum 2.1nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 2.1nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 195pF @ 10V at Vds to protect the device. The input capacitance is specified at 195pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Bulk for safeguarding or transporting components. Style of the enclosure/case 6-UFBGA, DSBGA that offers mechanical and thermal protection. Type of package 6-DSBGA (1x1.5) that preserves the integrity of the device. Maximum power capability 800mW for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 2.1nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 100mOhm @ 1A, 4.5V for MOSFET specifications. Classification series for the product or component NexFET™. Supplier package type 6-DSBGA (1x1.5) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 250µA for MOSFET threshold specifications.
