Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 2 N-Channel (Half Bridge). Is capable of sustaining a continuous drain current (Id) of 40A at 25°C. Supports a Vdss drain-to-source voltage rated at 25V. Offers FET traits classified as Logic Level Gate. Ensures maximum 10.7nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 10.7nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1870pF @ 12.5V at Vds to protect the device. The input capacitance is specified at 1870pF @ 12.5V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerLDFN that offers mechanical and thermal protection. Type of package 8-LSON (5x6) that preserves the integrity of the device. Maximum power capability 13W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 10.7nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 6mOhm @ 20A, 8V for MOSFET specifications. Classification series for the product or component NexFET™. Supplier package type 8-LSON (5x6) for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 2.1V @ 250µA for MOSFET threshold specifications.