Description

Configured in a manner identified as 2 N-Channel (Half Bridge). Is capable of sustaining a continuous drain current (Id) of 30A at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Offers FET traits classified as Logic Level Gate. Ensures maximum 9.2nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 9.2nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 1150pF @ 15V at Vds to protect the device. The input capacitance is specified at 1150pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 5-LGA that offers mechanical and thermal protection. Type of package 5-PTAB (5x3.5) that preserves the integrity of the device. Maximum power capability 8W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 9.2nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 7.7mOhm @ 25A, 8V for MOSFET specifications. Classification series for the product or component NexFET™. Supplier package type 5-PTAB (5x3.5) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.9V @ 250µA for MOSFET threshold specifications.