Attribute
Description
Manufacturer Part Number
CSD88584Q5DC
Manufacturer
Description
MOSFET 2N-CH 40V 22VSON-CLIP
Manufacturer Lead Time
53 weeks
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 117

Quantity Unit Price Ext. Price
2500 ₹ 150.75000 ₹ 3,76,875.00
500 ₹ 184.51000 ₹ 92,255.00
100 ₹ 197.40000 ₹ 19,740.00
10 ₹ 278.04000 ₹ 2,780.40
1 ₹ 420.08000 ₹ 420.08

Stock:

Distributor: 108


Quantity Unit Price Ext. Price
1 ₹ 420.08000 ₹ 420.08
10 ₹ 278.57000 ₹ 2,785.70
100 ₹ 197.58000 ₹ 19,758.00
500 ₹ 185.12000 ₹ 92,560.00
1000 ₹ 175.33000 ₹ 1,75,330.00
2500 ₹ 150.41000 ₹ 3,76,025.00

Stock:

Distributor: 145


Quantity Unit Price Ext. Price
20 ₹ 1,404.93000 ₹ 28,098.60
15 ₹ 1,567.03000 ₹ 23,505.45
11 ₹ 1,621.07000 ₹ 17,831.77
8 ₹ 1,675.10000 ₹ 13,400.80
6 ₹ 1,729.15000 ₹ 10,374.90
3 ₹ 2,107.39000 ₹ 6,322.17

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line NexFET™
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Half Bridge)
Transistor Special Function -
Drain-Source Breakdown Volts 40V
Continuous Drain Current at 25C -
Max On-State Resistance 0.95mOhm @ 30A, 10V
Max Threshold Gate Voltage 2.3V @ 250µA
Max Gate Charge at Vgs 88nC @ 4.5V
Max Input Cap at Vds 12400pF @ 20V
Maximum Power Handling 12W
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 22-PowerTFDFN
Vendor Package Type 22-VSON-CLIP (5x6)

Description

Configured in a manner identified as 2 N-Channel (Half Bridge). Supports a Vdss drain-to-source voltage rated at 40V. Ensures maximum 88nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 88nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 12400pF @ 20V at Vds to protect the device. The input capacitance is specified at 12400pF @ 20V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 22-PowerTFDFN that offers mechanical and thermal protection. Type of package 22-VSON-CLIP (5x6) that preserves the integrity of the device. Maximum power capability 12W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 88nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 0.95mOhm @ 30A, 10V for MOSFET specifications. Classification series for the product or component NexFET™. Supplier package type 22-VSON-CLIP (5x6) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.3V @ 250µA for MOSFET threshold specifications.