Description

Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 500mA, 330mA at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Offers FET traits classified as Logic Level Gate. Ensures maximum 1.23nC @ 4V gate charge at Vgs for improved switching efficiency. Maintains 1.23nC @ 4V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 46pF @ 10V at Vds to protect the device. The input capacitance is specified at 46pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case SOT-563, SOT-666 that offers mechanical and thermal protection. Type of package ES6 that preserves the integrity of the device. Maximum power capability 150mW for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 1.23nC @ 4V for MOSFET performance. Maximum Rds(on) at Id and Vgs 630mOhm @ 200mA, 5V for MOSFET specifications. Supplier package type ES6 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 1mA for MOSFET threshold specifications.