Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 4A at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Offers FET traits classified as Logic Level Gate. Ensures maximum 2.5nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 2.5nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 280pF @ 15V at Vds to protect the device. The input capacitance is specified at 280pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 6-WDFN Exposed Pad that offers mechanical and thermal protection. Type of package 6-µDFN (2x2) that preserves the integrity of the device. Maximum power capability 1W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 2.5nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 46mOhm @ 4A, 10V for MOSFET specifications. Supplier package type 6-µDFN (2x2) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.5V @ 100µA for MOSFET threshold specifications.