Attribute
Description
Manufacturer Part Number
SSM6N61NU,LF
Description
MOSFET 2N-CH 20V 4A 6UDFNB
Manufacturer Lead Time
1 week
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 116

Quantity Unit Price Ext. Price
48000 ₹ 10.79000 ₹ 5,17,920.00
24000 ₹ 11.07000 ₹ 2,65,680.00
12000 ₹ 11.36000 ₹ 1,36,320.00
6000 ₹ 11.67000 ₹ 70,020.00
3000 ₹ 12.34000 ₹ 37,020.00

Stock:

Distributor: 117


Quantity Unit Price Ext. Price
30000 ₹ 10.81000 ₹ 3,24,300.00
21000 ₹ 11.09000 ₹ 2,32,890.00
15000 ₹ 11.49000 ₹ 1,72,350.00
9000 ₹ 11.91000 ₹ 1,07,190.00
6000 ₹ 12.78000 ₹ 76,680.00
3000 ₹ 13.17000 ₹ 39,510.00
1000 ₹ 16.84000 ₹ 16,840.00
500 ₹ 18.75000 ₹ 9,375.00
100 ₹ 24.69000 ₹ 2,469.00
10 ₹ 38.43000 ₹ 384.30
1 ₹ 62.27000 ₹ 62.27

Stock:

Distributor: 108


Quantity Unit Price Ext. Price
1 ₹ 62.30000 ₹ 62.30
10 ₹ 38.45000 ₹ 384.50
100 ₹ 24.74000 ₹ 2,474.00
500 ₹ 18.78000 ₹ 9,390.00
1000 ₹ 16.11000 ₹ 16,110.00
3000 ₹ 12.46000 ₹ 37,380.00
6000 ₹ 12.37000 ₹ 74,220.00
9000 ₹ 11.04000 ₹ 99,360.00
24000 ₹ 10.77000 ₹ 2,58,480.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function Logic Level Gate, 1.5V Drive
Drain-Source Breakdown Volts 20V
Continuous Drain Current at 25C 4A
Max On-State Resistance 33mOhm @ 4A, 4.5V
Max Threshold Gate Voltage 1V @ 1mA
Max Gate Charge at Vgs 3.6nC @ 4.5V
Max Input Cap at Vds 410pF @ 10V
Maximum Power Handling 2W
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 6-WDFN Exposed Pad
Vendor Package Type 6-UDFNB (2x2)

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 4A at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Offers FET traits classified as Logic Level Gate, 1.5V Drive. Ensures maximum 3.6nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 3.6nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 410pF @ 10V at Vds to protect the device. The input capacitance is specified at 410pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 6-WDFN Exposed Pad that offers mechanical and thermal protection. Type of package 6-UDFNB (2x2) that preserves the integrity of the device. Maximum power capability 2W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 3.6nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 33mOhm @ 4A, 4.5V for MOSFET specifications. Supplier package type 6-UDFNB (2x2) for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 1mA for MOSFET threshold specifications.