Attribute
Description
Manufacturer Part Number
SSM6N7002CFU,LF
Description
MOSFET 2N-CH 60V 0.17A US6
Manufacturer Lead Time
1 week
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 116

Quantity Unit Price Ext. Price
24000 ₹ 2.23000 ₹ 53,520.00
18000 ₹ 2.28000 ₹ 41,040.00
12000 ₹ 2.34000 ₹ 28,080.00
6000 ₹ 2.40000 ₹ 14,400.00
3000 ₹ 2.55000 ₹ 7,650.00

Stock:

Distributor: 117


Quantity Unit Price Ext. Price
300000 ₹ 2.23000 ₹ 6,69,000.00
150000 ₹ 2.32000 ₹ 3,48,000.00
75000 ₹ 2.51000 ₹ 1,88,250.00
30000 ₹ 2.81000 ₹ 84,300.00
21000 ₹ 2.95000 ₹ 61,950.00
15000 ₹ 3.10000 ₹ 46,500.00
9000 ₹ 3.33000 ₹ 29,970.00
6000 ₹ 3.54000 ₹ 21,240.00
3000 ₹ 3.96000 ₹ 11,880.00
1000 ₹ 4.93000 ₹ 4,930.00
500 ₹ 5.60000 ₹ 2,800.00
100 ₹ 7.65000 ₹ 765.00
10 ₹ 12.37000 ₹ 123.70
1 ₹ 20.47000 ₹ 20.47

Stock:

Distributor: 108


Quantity Unit Price Ext. Price
1 ₹ 13.35000 ₹ 13.35
10 ₹ 9.26000 ₹ 92.60
100 ₹ 4.72000 ₹ 472.00
3000 ₹ 2.31000 ₹ 6,930.00
9000 ₹ 2.23000 ₹ 20,070.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 60V
Continuous Drain Current at 25C 170mA
Max On-State Resistance 3.9Ohm @ 100mA, 10V
Max Threshold Gate Voltage 2.1V @ 250µA
Max Gate Charge at Vgs 0.35nC @ 4.5V
Max Input Cap at Vds 17pF @ 10V
Maximum Power Handling 285mW
Ambient Temp Range 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 6-TSSOP, SC-88, SOT-363
Vendor Package Type US6

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 170mA at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. Ensures maximum 0.35nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 0.35nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 17pF @ 10V at Vds to protect the device. The input capacitance is specified at 17pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 6-TSSOP, SC-88, SOT-363 that offers mechanical and thermal protection. Type of package US6 that preserves the integrity of the device. Maximum power capability 285mW for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 0.35nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 3.9Ohm @ 100mA, 10V for MOSFET specifications. Supplier package type US6 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.1V @ 250µA for MOSFET threshold specifications.