Description

Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 5A (Ta), 4A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 40V. Ensures maximum 11.8nC @ 10V, 18nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 11.8nC @ 10V, 18nC @ 10V gate charge at Vgs for dependable MOSFET operation. Evaluated as Automotive grade for quality control. The maximum input capacitance reaches 505pF @ 10V, 810pF @ 10V at Vds to protect the device. The input capacitance is specified at 505pF @ 10V, 810pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-SMD, Flat Leads that offers mechanical and thermal protection. Type of package PS-8 that preserves the integrity of the device. Maximum power capability 690mW (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Certification AEC-Q101 for compliance with testing or regulatory standards. Maximum Rds(on) at Id 11.8nC @ 10V, 18nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 36.3mOhm @ 2.5A, 10V, 56.8mOhm @ 2A, 10V for MOSFET specifications. Supplier package type PS-8 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 3V @ 1mA for MOSFET threshold specifications.