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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | - | |
| IC Encapsulation Type | Tape & Reel (TR) | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 200mA | |
| Max On-State Resistance | 2.1Ohm @ 500mA, 10V | |
| Max Threshold Gate Voltage | 3.1V @ 250µA | |
| Max Gate Charge at Vgs | - | |
| Max Input Cap at Vds | 17pF @ 25V | |
| Maximum Power Handling | 300mW | |
| Ambient Temp Range | 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | 6-TSSOP, SC-88, SOT-363 | |
| Vendor Package Type | US6 |
Description
Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 200mA at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. Offers FET traits classified as Logic Level Gate. The maximum input capacitance reaches 17pF @ 25V at Vds to protect the device. The input capacitance is specified at 17pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case 6-TSSOP, SC-88, SOT-363 that offers mechanical and thermal protection. Type of package US6 that preserves the integrity of the device. Maximum power capability 300mW for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id and Vgs 2.1Ohm @ 500mA, 10V for MOSFET specifications. Supplier package type US6 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 3.1V @ 250µA for MOSFET threshold specifications.
