Description

Is capable of sustaining a continuous drain current (Id) of 5.3A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 12nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 12nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 504pF @ 15V at Vds to protect the device. The input capacitance is specified at 504pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Cut Tape (CT) for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 8-SOP that preserves the integrity of the device. Maximum power capability 2W (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 12nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 41mOhm @ 5.3A, 10V for MOSFET specifications. Classification series for the product or component UMW. Supplier package type 8-SOP for component selection. Maximum Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold specifications.