Attribute
Description
Manufacturer Part Number
FDS6912A
Manufacturer
Description
MOSFET 2N-CH 30V 6A 8SOP
Manufacturer Lead Time
0 week
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
75000 ₹ 11.13000 ₹ 8,34,750.00
30000 ₹ 11.33000 ₹ 3,39,900.00
21000 ₹ 11.75000 ₹ 2,46,750.00
15000 ₹ 12.17000 ₹ 1,82,550.00
9000 ₹ 12.89000 ₹ 1,16,010.00
6000 ₹ 13.52000 ₹ 81,120.00
3000 ₹ 14.77000 ₹ 44,310.00
1000 ₹ 17.26000 ₹ 17,260.00
500 ₹ 19.22000 ₹ 9,610.00
100 ₹ 25.27000 ₹ 2,527.00
10 ₹ 39.34000 ₹ 393.40
1 ₹ 63.19000 ₹ 63.19

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Cut Tape (CT)
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 6A (Ta)
Max On-State Resistance 28mOhm @ 6A, 10V
Max Threshold Gate Voltage 3V @ 250µA
Max Gate Charge at Vgs 8.1nC @ 5V
Max Input Cap at Vds 575pF @ 15V
Maximum Power Handling 900mW (Ta)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 8-SOIC (0.154", 3.90mm Width)
Vendor Package Type 8-SOP

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 6A (Ta) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 8.1nC @ 5V gate charge at Vgs for improved switching efficiency. Maintains 8.1nC @ 5V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 575pF @ 15V at Vds to protect the device. The input capacitance is specified at 575pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Cut Tape (CT) for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 8-SOP that preserves the integrity of the device. Maximum power capability 900mW (Ta) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 8.1nC @ 5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 28mOhm @ 6A, 10V for MOSFET specifications. Supplier package type 8-SOP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 3V @ 250µA for MOSFET threshold specifications.