Attribute
Description
Manufacturer Part Number
SI1902DL-T1-GE3
Manufacturer
Description
MOSFET 2N-CH 20V 0.66A SC70-6
Manufacturer Lead Time
1 week
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 145

Quantity Unit Price Ext. Price
2020 ₹ 15.27000 ₹ 30,845.40
1510 ₹ 17.04000 ₹ 25,730.40
1170 ₹ 17.63000 ₹ 20,627.10
850 ₹ 18.22000 ₹ 15,487.00
550 ₹ 18.81000 ₹ 10,345.50
225 ₹ 22.92000 ₹ 5,157.00

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 20V
Continuous Drain Current at 25C 660mA
Max On-State Resistance 385mOhm @ 660mA, 4.5V
Max Threshold Gate Voltage 1.5V @ 250µA
Max Gate Charge at Vgs 1.2nC @ 4.5V
Max Input Cap at Vds -
Maximum Power Handling 270mW
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 6-TSSOP, SC-88, SOT-363
Vendor Package Type SC-70-6

Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 660mA at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Offers FET traits classified as Logic Level Gate. Ensures maximum 1.2nC @ 4.5V gate charge at Vgs for improved switching efficiency. Maintains 1.2nC @ 4.5V gate charge at Vgs for dependable MOSFET operation. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 6-TSSOP, SC-88, SOT-363 that offers mechanical and thermal protection. Type of package SC-70-6 that preserves the integrity of the device. Maximum power capability 270mW for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 1.2nC @ 4.5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 385mOhm @ 660mA, 4.5V for MOSFET specifications. Classification series for the product or component TrenchFET®. Supplier package type SC-70-6 for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 1.5V @ 250µA for MOSFET threshold specifications.