Attribute
Description
Manufacturer Part Number
SI3552DV-T1-GE3
Manufacturer
Description
MOSFET N/P-CH 30V 2.5A 6TSOP
Manufacturer Lead Time
1 week
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Stock:

Distributor: 145

Quantity Unit Price Ext. Price
890 ₹ 30.13000 ₹ 26,815.70
710 ₹ 31.38000 ₹ 22,279.80
550 ₹ 32.64000 ₹ 17,952.00
380 ₹ 35.15000 ₹ 13,357.00
245 ₹ 36.40000 ₹ 8,918.00
115 ₹ 38.91000 ₹ 4,474.65

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Obsolete
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement N and P-Channel
Transistor Special Function Logic Level Gate
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 2.5A
Max On-State Resistance 105mOhm @ 2.5A, 10V
Max Threshold Gate Voltage 1V @ 250µA (Min)
Max Gate Charge at Vgs 3.2nC @ 5V
Max Input Cap at Vds -
Maximum Power Handling 1.15W
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style SOT-23-6 Thin, TSOT-23-6
Vendor Package Type 6-TSOP

Description

Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 2.5A at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Offers FET traits classified as Logic Level Gate. Ensures maximum 3.2nC @ 5V gate charge at Vgs for improved switching efficiency. Maintains 3.2nC @ 5V gate charge at Vgs for dependable MOSFET operation. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case SOT-23-6 Thin, TSOT-23-6 that offers mechanical and thermal protection. Type of package 6-TSOP that preserves the integrity of the device. Maximum power capability 1.15W for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 3.2nC @ 5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 105mOhm @ 2.5A, 10V for MOSFET specifications. Classification series for the product or component TrenchFET®. Supplier package type 6-TSOP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 250µA (Min) for MOSFET threshold specifications.