Stock:
Distributor: 145
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 890 | ₹ 30.13000 | ₹ 26,815.70 |
| 710 | ₹ 31.38000 | ₹ 22,279.80 |
| 550 | ₹ 32.64000 | ₹ 17,952.00 |
| 380 | ₹ 35.15000 | ₹ 13,357.00 |
| 245 | ₹ 36.40000 | ₹ 8,918.00 |
| 115 | ₹ 38.91000 | ₹ 4,474.65 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Obsolete | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | N and P-Channel | |
| Transistor Special Function | Logic Level Gate | |
| Drain-Source Breakdown Volts | 30V | |
| Continuous Drain Current at 25C | 2.5A | |
| Max On-State Resistance | 105mOhm @ 2.5A, 10V | |
| Max Threshold Gate Voltage | 1V @ 250µA (Min) | |
| Max Gate Charge at Vgs | 3.2nC @ 5V | |
| Max Input Cap at Vds | - | |
| Maximum Power Handling | 1.15W | |
| Ambient Temp Range | -55°C ~ 150°C (TJ) | |
| Quality Grade Level | - | |
| Certification Qualification | - | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SOT-23-6 Thin, TSOT-23-6 | |
| Vendor Package Type | 6-TSOP |
Description
Configured in a manner identified as N and P-Channel. Is capable of sustaining a continuous drain current (Id) of 2.5A at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Offers FET traits classified as Logic Level Gate. Ensures maximum 3.2nC @ 5V gate charge at Vgs for improved switching efficiency. Maintains 3.2nC @ 5V gate charge at Vgs for dependable MOSFET operation. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case SOT-23-6 Thin, TSOT-23-6 that offers mechanical and thermal protection. Type of package 6-TSOP that preserves the integrity of the device. Maximum power capability 1.15W for safeguarding the device. Product status Obsolete concerning availability and lifecycle. Maximum Rds(on) at Id 3.2nC @ 5V for MOSFET performance. Maximum Rds(on) at Id and Vgs 105mOhm @ 2.5A, 10V for MOSFET specifications. Classification series for the product or component TrenchFET®. Supplier package type 6-TSOP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 250µA (Min) for MOSFET threshold specifications.