Description

Configured in a manner identified as 2 P-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 1.14A (Ta), 1.3A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 12V. Ensures maximum 4.2nC @ 8V gate charge at Vgs for improved switching efficiency. Maintains 4.2nC @ 8V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 120pF @ 6V at Vds to protect the device. The input capacitance is specified at 120pF @ 6V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 6-TSSOP, SC-88, SOT-363 that offers mechanical and thermal protection. Type of package SC-70-6 that preserves the integrity of the device. Maximum power capability 740mW (Ta), 1.25W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 4.2nC @ 8V for MOSFET performance. Maximum Rds(on) at Id and Vgs 390mOhm @ 1A, 4.5V for MOSFET specifications. Classification series for the product or component TrenchFET®. Supplier package type SC-70-6 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1V @ 250µA for MOSFET threshold specifications.