Attribute
Description
Manufacturer Part Number
SIA906EDJ-T5-GE3
Description
DUAL N-CHANNEL 20-V (D-S) MOSFET
Manufacturer Lead Time
1 week
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Stock:

Distributor: 117

Quantity Unit Price Ext. Price
30000 ₹ 17.24000 ₹ 5,17,200.00
21000 ₹ 17.40000 ₹ 3,65,400.00
15000 ₹ 17.56000 ₹ 2,63,400.00
9000 ₹ 17.84000 ₹ 1,60,560.00
6000 ₹ 18.09000 ₹ 1,08,540.00
3000 ₹ 18.60000 ₹ 55,800.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 20V
Continuous Drain Current at 25C 4.5A (Ta), 4.5A (Tc)
Max On-State Resistance 46mOhm @ 3.9A, 4.5V
Max Threshold Gate Voltage 1.4V @ 250µA
Max Gate Charge at Vgs 3.5nC @ 10V
Max Input Cap at Vds 350pF @ 10V
Maximum Power Handling 1.9W (Ta), 7.8W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style PowerPAK® SC-70-6
Vendor Package Type PowerPAK® SC-70-6

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 4.5A (Ta), 4.5A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 20V. Ensures maximum 3.5nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 3.5nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 350pF @ 10V at Vds to protect the device. The input capacitance is specified at 350pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case PowerPAK® SC-70-6 that offers mechanical and thermal protection. Type of package PowerPAK® SC-70-6 that preserves the integrity of the device. Maximum power capability 1.9W (Ta), 7.8W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 3.5nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 46mOhm @ 3.9A, 4.5V for MOSFET specifications. Classification series for the product or component TrenchFET®. Supplier package type PowerPAK® SC-70-6 for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.4V @ 250µA for MOSFET threshold specifications.