Attribute
Description
Manufacturer Part Number
SIS9446DN-T1-GE3
Description
MOSFET 2N-CH 40V 11.3A PWRPAIR
Manufacturer Lead Time
1 week
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 117

Quantity Unit Price Ext. Price
6000 ₹ 42.84000 ₹ 2,57,040.00
3000 ₹ 45.84000 ₹ 1,37,520.00
1000 ₹ 52.42000 ₹ 52,420.00
500 ₹ 56.71000 ₹ 28,355.00
100 ₹ 71.62000 ₹ 7,162.00
10 ₹ 106.36000 ₹ 1,063.60
1 ₹ 167.32000 ₹ 167.32

Stock:

Distributor: 58


Quantity Unit Price Ext. Price
3000 ₹ 44.73000 ₹ 1,34,190.00

Stock:

Distributor: 130


Quantity Unit Price Ext. Price
1 ₹ 143.49000 ₹ 143.49
10 ₹ 91.59000 ₹ 915.90
100 ₹ 61.44000 ₹ 6,144.00
500 ₹ 48.69000 ₹ 24,345.00
1000 ₹ 42.66000 ₹ 42,660.00

Stock:

Distributor: 108


Quantity Unit Price Ext. Price
1 ₹ 167.32000 ₹ 167.32
10 ₹ 106.80000 ₹ 1,068.00
100 ₹ 71.65000 ₹ 7,165.00
500 ₹ 56.78000 ₹ 28,390.00
1000 ₹ 52.51000 ₹ 52,510.00
3000 ₹ 45.84000 ₹ 1,37,520.00
6000 ₹ 42.81000 ₹ 2,56,860.00

Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 40V
Continuous Drain Current at 25C 11.3A (Ta), 34A (Tc)
Max On-State Resistance 12mOhm @ 10A, 10V
Max Threshold Gate Voltage 2.3V @ 250µA
Max Gate Charge at Vgs 16nC @ 10V
Max Input Cap at Vds 720pF @ 20V
Maximum Power Handling 2.6W (Ta), 23W (Tc)
Ambient Temp Range -55°C ~ 150°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style PowerPAK® 1212-8
Vendor Package Type PowerPAK® 1212-8

Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 11.3A (Ta), 34A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 40V. Ensures maximum 16nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 16nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 720pF @ 20V at Vds to protect the device. The input capacitance is specified at 720pF @ 20V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case PowerPAK® 1212-8 that offers mechanical and thermal protection. Type of package PowerPAK® 1212-8 that preserves the integrity of the device. Maximum power capability 2.6W (Ta), 23W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 16nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 12mOhm @ 10A, 10V for MOSFET specifications. Classification series for the product or component TrenchFET®. Supplier package type PowerPAK® 1212-8 for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 2.3V @ 250µA for MOSFET threshold specifications.