Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 2 N-Channel (Dual) Common Drain. Is capable of sustaining a continuous drain current (Id) of 30.5A (Ta), 60A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 25V. Ensures maximum 56nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 56nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 2650pF @ 10V at Vds to protect the device. The input capacitance is specified at 2650pF @ 10V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case PowerPAK® 1212-8SCD that offers mechanical and thermal protection. Type of package PowerPAK® 1212-8SCD that preserves the integrity of the device. Maximum power capability 5.2W (Ta), 69.4W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 56nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 3.5mOhm @ 7A, 10V for MOSFET specifications. Classification series for the product or component TrenchFET® Gen IV. Supplier package type PowerPAK® 1212-8SCD for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 2.3V @ 250µA for MOSFET threshold specifications.