Description

Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Configured in a manner identified as 2 N-Channel (Half Bridge). Is capable of sustaining a continuous drain current (Id) of 16A, 28A at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Offers FET traits classified as Logic Level Gate. Ensures maximum 21nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 21nC @ 10V gate charge at Vgs for dependable MOSFET operation. The maximum input capacitance reaches 790pF @ 15V at Vds to protect the device. The input capacitance is specified at 790pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-PowerWDFN that offers mechanical and thermal protection. Type of package 8-PowerPair® (6x5) that preserves the integrity of the device. Maximum power capability 29W, 100W for safeguarding the device. Product status Active concerning availability and lifecycle. Maximum Rds(on) at Id 21nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 12mOhm @ 13.8A, 10V for MOSFET specifications. Classification series for the product or component TrenchFET®. Supplier package type 8-PowerPair® (6x5) for component selection. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Maximum Vgs(th) at Id 2.2V @ 250µA for MOSFET threshold specifications.