Description

Configured in a manner identified as 2 P-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 2.5A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 11.1nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 11.1nC @ 10V gate charge at Vgs for dependable MOSFET operation. Evaluated as Automotive grade for quality control. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case SOT-23-6 Thin, TSOT-23-6 that offers mechanical and thermal protection. Type of package 6-TSOP that preserves the integrity of the device. Maximum power capability 1.67W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Certification AEC-Q101 for compliance with testing or regulatory standards. Maximum Rds(on) at Id 11.1nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 155mOhm @ 400mA, 10V for MOSFET specifications. Classification series for the product or component TrenchFET®. Supplier package type 6-TSOP for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 1.5V @ 250µA for MOSFET threshold specifications.