Attribute
Description
Manufacturer Part Number
SQ4920EY-T1_BE3
Description
MOSFET 2N-CH 30V 8A 8SOIC
Manufacturer Lead Time
1 week
Note : GST will not be applied to orders shipping outside of India

Stock:

Distributor: 116

Quantity Unit Price Ext. Price
40000 ₹ 55.97000 ₹ 22,38,800.00
20000 ₹ 56.64000 ₹ 11,32,800.00
10000 ₹ 57.60000 ₹ 5,76,000.00
5000 ₹ 58.53000 ₹ 2,92,650.00
2500 ₹ 59.48000 ₹ 1,48,700.00

Stock:

Distributor: 117


Quantity Unit Price Ext. Price
5000 ₹ 59.48000 ₹ 2,97,400.00
2500 ₹ 61.97000 ₹ 1,54,925.00
1000 ₹ 72.79000 ₹ 72,790.00
500 ₹ 74.38000 ₹ 37,190.00
100 ₹ 92.92000 ₹ 9,292.00
10 ₹ 136.26000 ₹ 1,362.60
1 ₹ 211.82000 ₹ 211.82

Stock:

Distributor: 113


Quantity Unit Price Ext. Price
2500 ₹ 98.43000 ₹ 2,46,075.00
5000 ₹ 97.19000 ₹ 4,85,950.00
7500 ₹ 95.94000 ₹ 7,19,550.00
10000 ₹ 95.32000 ₹ 9,53,200.00

Stock:

Distributor: 108


Quantity Unit Price Ext. Price
1 ₹ 211.82000 ₹ 211.82
10 ₹ 137.06000 ₹ 1,370.60
100 ₹ 93.45000 ₹ 9,345.00
500 ₹ 74.40000 ₹ 37,200.00
2500 ₹ 61.94000 ₹ 1,54,850.00
5000 ₹ 59.45000 ₹ 2,97,250.00

Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line TrenchFET®
IC Encapsulation Type Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
Availability Status Active
Core Technology Platform MOSFET (Metal Oxide)
Setup Arrangement 2 N-Channel (Dual)
Transistor Special Function -
Drain-Source Breakdown Volts 30V
Continuous Drain Current at 25C 8A (Tc)
Max On-State Resistance 14.5mOhm @ 6A, 10V
Max Threshold Gate Voltage 2.5V @ 250µA
Max Gate Charge at Vgs 30nC @ 10V
Max Input Cap at Vds 1465pF @ 15V
Maximum Power Handling 4.4W (Tc)
Ambient Temp Range -55°C ~ 175°C (TJ)
Quality Grade Level Automotive
Certification Qualification AEC-Q101
Attachment Mounting Style Surface Mount
Component Housing Style 8-SOIC (0.154", 3.90mm Width)
Vendor Package Type 8-SOIC

Description

Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 8A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 30V. Ensures maximum 30nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 30nC @ 10V gate charge at Vgs for dependable MOSFET operation. Evaluated as Automotive grade for quality control. The maximum input capacitance reaches 1465pF @ 15V at Vds to protect the device. The input capacitance is specified at 1465pF @ 15V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 8-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 8-SOIC that preserves the integrity of the device. Maximum power capability 4.4W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Certification AEC-Q101 for compliance with testing or regulatory standards. Maximum Rds(on) at Id 30nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 14.5mOhm @ 6A, 10V for MOSFET specifications. Classification series for the product or component TrenchFET®. Supplier package type 8-SOIC for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold specifications.