Stock:
Distributor: 117
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 9000 | ₹ 42.00000 | ₹ 3,78,000.00 |
| 6000 | ₹ 42.04000 | ₹ 2,52,240.00 |
| 3000 | ₹ 45.07000 | ₹ 1,35,210.00 |
| 1000 | ₹ 51.41000 | ₹ 51,410.00 |
| 500 | ₹ 55.80000 | ₹ 27,900.00 |
| 100 | ₹ 70.51000 | ₹ 7,051.00 |
| 10 | ₹ 104.84000 | ₹ 1,048.40 |
| 1 | ₹ 164.65000 | ₹ 164.65 |
Stock:
Distributor: 116
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 48000 | ₹ 42.00000 | ₹ 20,16,000.00 |
| 24000 | ₹ 43.08000 | ₹ 10,33,920.00 |
| 12000 | ₹ 44.21000 | ₹ 5,30,520.00 |
| 6000 | ₹ 45.40000 | ₹ 2,72,400.00 |
| 3000 | ₹ 48.00000 | ₹ 1,44,000.00 |
Stock:
Distributor: 108
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 3000 | ₹ 48.59000 | ₹ 1,45,770.00 |
| 6000 | ₹ 44.05000 | ₹ 2,64,300.00 |
| 9000 | ₹ 43.61000 | ₹ 3,92,490.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Import Duty Classification | - | |
| Product Series Line | TrenchFET® | |
| IC Encapsulation Type | Tape & Reel (TR)Cut Tape (CT)Digi-Reel® | |
| Availability Status | Active | |
| Core Technology Platform | MOSFET (Metal Oxide) | |
| Setup Arrangement | 2 N-Channel (Dual) | |
| Transistor Special Function | - | |
| Drain-Source Breakdown Volts | 60V | |
| Continuous Drain Current at 25C | 30A (Tc) | |
| Max On-State Resistance | 12mOhm @ 10A, 10V | |
| Max Threshold Gate Voltage | 2.5V @ 250µA | |
| Max Gate Charge at Vgs | 30nC @ 10V | |
| Max Input Cap at Vds | 1600pF @ 25V | |
| Maximum Power Handling | 48W (Tc) | |
| Ambient Temp Range | -55°C ~ 175°C (TJ) | |
| Quality Grade Level | Automotive | |
| Certification Qualification | AEC-Q101 | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | PowerPAK® SO-8 Dual | |
| Vendor Package Type | PowerPAK® SO-8 Dual Asymmetric |
Description
Configured in a manner identified as 2 N-Channel (Dual). Is capable of sustaining a continuous drain current (Id) of 30A (Tc) at 25°C. Supports a Vdss drain-to-source voltage rated at 60V. Ensures maximum 30nC @ 10V gate charge at Vgs for improved switching efficiency. Maintains 30nC @ 10V gate charge at Vgs for dependable MOSFET operation. Evaluated as Automotive grade for quality control. The maximum input capacitance reaches 1600pF @ 25V at Vds to protect the device. The input capacitance is specified at 1600pF @ 25V at Vds for peak performance. Mounting configuration Surface Mount for structural stability. Temperature range -55°C ~ 175°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case PowerPAK® SO-8 Dual that offers mechanical and thermal protection. Type of package PowerPAK® SO-8 Dual Asymmetric that preserves the integrity of the device. Maximum power capability 48W (Tc) for safeguarding the device. Product status Active concerning availability and lifecycle. Certification AEC-Q101 for compliance with testing or regulatory standards. Maximum Rds(on) at Id 30nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 12mOhm @ 10A, 10V for MOSFET specifications. Classification series for the product or component TrenchFET®. Supplier package type PowerPAK® SO-8 Dual Asymmetric for component selection. The primary technology platform MOSFET (Metal Oxide) linked to the product category. Maximum Vgs(th) at Id 2.5V @ 250µA for MOSFET threshold specifications.
