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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | 4 N-Channel (H-Bridge) | |
| Drain-Source Breakdown Volts | 500V | |
| Continuous Drain Current at 25C | 31A | |
| Max On-State Resistance | 220 mOhm @ 19A, 10V | |
| Max Threshold Gate Voltage | 6V @ 250µA | |
| Gate Charge at Vgs | 160nC @ 10V | |
| Input Cap at Vds | 7210pF @ 25V | |
| Maximum Power Handling | 1140W | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | 16-MTP |
Description
Assesses resistance at forward current 4 N-Channel (H-Bridge) for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 31A at 25°C. Supports a Vdss drain-to-source voltage rated at 500V. Includes FET category defined as 4 N-Channel (H-Bridge). Maintains 160nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 7210pF @ 25V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Style of the enclosure/case 16-MTP that offers mechanical and thermal protection. Maximum power capability 1140W for safeguarding the device. Maximum Rds(on) at Id 160nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 220 mOhm @ 19A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 6V @ 250µA for MOSFET threshold specifications.