Stock:
Distributor: 13
| Quantity | Unit Price | Ext. Price |
|---|---|---|
| 6 | ₹ 1,431.00000 | ₹ 8,586.00 |
Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Field Effect Transistor Type | MOSFET N-Channel, Metal Oxide | |
| Drain-Source Breakdown Volts | 500V | |
| Continuous Drain Current at 25C | 57A | |
| Max On-State Resistance | 80 mOhm @ 34A, 10V | |
| Max Threshold Gate Voltage | 4V @ 250µA | |
| Gate Charge at Vgs | 338nC @ 10V | |
| Input Cap at Vds | 10000pF @ 25V | |
| Maximum Power Handling | 625W | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | SOT-227-4, miniBLOC |
Description
Assesses resistance at forward current MOSFET N-Channel, Metal Oxide for LED or diode testing. Is capable of sustaining a continuous drain current (Id) of 57A at 25°C. Supports a Vdss drain-to-source voltage rated at 500V. Includes FET category defined as MOSFET N-Channel, Metal Oxide. Maintains 338nC @ 10V gate charge at Vgs for dependable MOSFET operation. The input capacitance is specified at 10000pF @ 25V at Vds for peak performance. Mounting configuration Chassis Mount for structural stability. Style of the enclosure/case SOT-227-4, miniBLOC that offers mechanical and thermal protection. Maximum power capability 625W for safeguarding the device. Maximum Rds(on) at Id 338nC @ 10V for MOSFET performance. Maximum Rds(on) at Id and Vgs 80 mOhm @ 34A, 10V for MOSFET specifications. Maximum Vgs(th) at Id 4V @ 250µA for MOSFET threshold specifications.
