Attribute
Description
Manufacturer Part Number
BD650-S
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
18 weeks

Our team will assist you shortly.

Product Attributes

Type Description
Category
Transistor Class PNP - Darlington
Maximum Collector Amps 8A
Max Collector-Emitter Breakdown 100V
Vce Saturation (Max) @ Ib, Ic 2.5V @ 50mA, 5A
Collector Cutoff Max 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V
Maximum Power Handling 2W
Transition Freq -
Attachment Mounting Style Through Hole
Component Housing Style TO-220-3

Description

Assesses resistance at forward current 500µA for LED or diode testing. Has a peak collector current (Ic) of 8A. Defines a collector cutoff current indicated at 500µA. Features a DC current gain hFE at Ic assessed at 2.5V @ 50mA, 5A. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-220-3 that offers mechanical and thermal protection. Maximum power capability 2W for safeguarding the device. Classification of transistor PNP - Darlington for circuit design. Maximum Vce(on) at Vge 2.5V @ 50mA, 5A for transistor specifications. Maximum collector-emitter breakdown voltage 100V.