Attribute
Description
Manufacturer Part Number
BDV65B-S
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
18 weeks

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Product Attributes

Type Description
Category
Transistor Class NPN - Darlington
Maximum Collector Amps 12A
Max Collector-Emitter Breakdown 100V
Vce Saturation (Max) @ Ib, Ic 2V @ 20mA, 5A
Collector Cutoff Max 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 5A, 4V
Maximum Power Handling 3.5W
Transition Freq -
Attachment Mounting Style Through Hole
Component Housing Style TO-218-3

Description

Assesses resistance at forward current 2mA for LED or diode testing. Has a peak collector current (Ic) of 12A. Defines a collector cutoff current indicated at 2mA. Features a DC current gain hFE at Ic assessed at 2V @ 20mA, 5A. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-218-3 that offers mechanical and thermal protection. Maximum power capability 3.5W for safeguarding the device. Classification of transistor NPN - Darlington for circuit design. Maximum Vce(on) at Vge 2V @ 20mA, 5A for transistor specifications. Maximum collector-emitter breakdown voltage 100V.