Attribute
Description
Manufacturer Part Number
BDV65B-S
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
18 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN - Darlington | |
| Maximum Collector Amps | 12A | |
| Max Collector-Emitter Breakdown | 100V | |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 20mA, 5A | |
| Collector Cutoff Max | 2mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 5A, 4V | |
| Maximum Power Handling | 3.5W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-218-3 |
Description
Assesses resistance at forward current 2mA for LED or diode testing. Has a peak collector current (Ic) of 12A. Defines a collector cutoff current indicated at 2mA. Features a DC current gain hFE at Ic assessed at 2V @ 20mA, 5A. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-218-3 that offers mechanical and thermal protection. Maximum power capability 3.5W for safeguarding the device. Classification of transistor NPN - Darlington for circuit design. Maximum Vce(on) at Vge 2V @ 20mA, 5A for transistor specifications. Maximum collector-emitter breakdown voltage 100V.
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