Attribute
Description
Manufacturer Part Number
BDW83C-S
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,...
Manufacturer Lead Time
18 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN - Darlington | |
| Maximum Collector Amps | 15A | |
| Max Collector-Emitter Breakdown | 100V | |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 150mA, 15A | |
| Collector Cutoff Max | 1mA | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 6A, 3V | |
| Maximum Power Handling | 3.5W | |
| Transition Freq | - | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-218-3 |
Description
Assesses resistance at forward current 1mA for LED or diode testing. Has a peak collector current (Ic) of 15A. Defines a collector cutoff current indicated at 1mA. Features a DC current gain hFE at Ic assessed at 4V @ 150mA, 15A. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-218-3 that offers mechanical and thermal protection. Maximum power capability 3.5W for safeguarding the device. Classification of transistor NPN - Darlington for circuit design. Maximum Vce(on) at Vge 4V @ 150mA, 15A for transistor specifications. Maximum collector-emitter breakdown voltage 100V.
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