Description

Assesses resistance at forward current 50µA for LED or diode testing. Has a peak collector current (Ic) of 4A. Defines a collector cutoff current indicated at 50µA. Features a DC current gain hFE at Ic assessed at 1V @ 400µA, 2A. Provides a 12MHz transition frequency for smooth signal modulation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-220-3 that offers mechanical and thermal protection. Maximum power capability 75W for safeguarding the device. Classification of transistor NPN - Darlington for circuit design. Maximum Vce(on) at Vge 1V @ 400µA, 2A for transistor specifications. Maximum collector-emitter breakdown voltage 550V.