Attribute
Description
Manufacturer Part Number
2N3904PH
Manufacturer
Description
Transistors - Bipolar (BJT) -Single & Arrays,
NPN,
200mA,...
Manufacturer Lead Time
45 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Maximum Collector Amps | 200mA | |
| Max Collector-Emitter Breakdown | 40V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA | |
| Collector Cutoff Max | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 10mA, 1V | |
| Maximum Power Handling | 625mW | |
| Transition Freq | 300MHz | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-226-3, TO-92-3 (TO-226AA) |
Description
Has a peak collector current (Ic) of 200mA. Features a DC current gain hFE at Ic assessed at 300mV @ 5mA, 50mA. Provides a 300MHz transition frequency for smooth signal modulation. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-226-3, TO-92-3 (TO-226AA) that offers mechanical and thermal protection. Maximum power capability 625mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 300mV @ 5mA, 50mA for transistor specifications. Maximum collector-emitter breakdown voltage 40V.
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