Description

Assesses resistance at forward current 8GHz for LED or diode testing. Has a peak collector current (Ic) of 35mA. Features a DC current gain hFE at Ic assessed at 70 @ 10mA, 8V. Provides a 8GHz transition frequency for smooth signal modulation. Delivers 22dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-253-4, TO-253AA that offers mechanical and thermal protection. Maximum power capability 250mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 22dB for transistor specifications. Maximum collector-emitter breakdown voltage 12V.