Attribute
Description
Manufacturer Part Number
BFP 183W H6327
Description
TRANS RF NPN 12V SOT343
Manufacturer Lead Time
16 weeks

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 12V
Transition Freq 8.5GHz
Noise Figure @ f 0.9dB ~ 1.4dB @ 900MHz ~ 1.8GHz
Amplification Factor 22dB
Maximum Power Handling 450mW
DC Current Gain (hFE) @ Ic, Vce 70 @ 15mA, 8V
Maximum Collector Amps 65mA
Attachment Mounting Style Surface Mount
Component Housing Style SC-82A, SOT-343

Description

Assesses resistance at forward current 8.5GHz for LED or diode testing. Has a peak collector current (Ic) of 65mA. Features a DC current gain hFE at Ic assessed at 70 @ 15mA, 8V. Provides a 8.5GHz transition frequency for smooth signal modulation. Delivers 22dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-82A, SOT-343 that offers mechanical and thermal protection. Maximum power capability 450mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 22dB for transistor specifications. Maximum collector-emitter breakdown voltage 12V.