Attribute
Description
Manufacturer Part Number
BFP 460 E6327
Manufacturer
Description
TRANSISTOR RF NPN 50MA SOT-343
Manufacturer Lead Time
16 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 5.8V | |
| Transition Freq | 22GHz | |
| Noise Figure @ f | 0.7dB ~ 1.2dB @ 100MHz ~ 3GHz | |
| Amplification Factor | 12.5dB ~ 26.5dB | |
| Maximum Power Handling | 230mW | |
| DC Current Gain (hFE) @ Ic, Vce | 90 @ 20mA, 3V | |
| Maximum Collector Amps | 70mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | SC-82A, SOT-343 |
Description
Assesses resistance at forward current 22GHz for LED or diode testing. Has a peak collector current (Ic) of 70mA. Features a DC current gain hFE at Ic assessed at 90 @ 20mA, 3V. Provides a 22GHz transition frequency for smooth signal modulation. Delivers 12.5dB ~ 26.5dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-82A, SOT-343 that offers mechanical and thermal protection. Maximum power capability 230mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 12.5dB ~ 26.5dB for transistor specifications. Maximum collector-emitter breakdown voltage 5.8V.
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