Attribute
Description
Manufacturer Part Number
BFR 182W E6327
Description
TRANSISTOR NPN RF 12V SOT-323
Manufacturer Lead Time
16 weeks

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 12V
Transition Freq 8GHz
Noise Figure @ f 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
Amplification Factor 19dB
Maximum Power Handling 250mW
DC Current Gain (hFE) @ Ic, Vce 70 @ 10mA, 8V
Maximum Collector Amps 35mA
Attachment Mounting Style Surface Mount
Component Housing Style SC-70, SOT-323

Description

Assesses resistance at forward current 8GHz for LED or diode testing. Has a peak collector current (Ic) of 35mA. Features a DC current gain hFE at Ic assessed at 70 @ 10mA, 8V. Provides a 8GHz transition frequency for smooth signal modulation. Delivers 19dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case SC-70, SOT-323 that offers mechanical and thermal protection. Maximum power capability 250mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 19dB for transistor specifications. Maximum collector-emitter breakdown voltage 12V.