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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| Transistor Class | NPN | |
| Max Collector-Emitter Breakdown | 10V | |
| Transition Freq | 1.5GHz | |
| Noise Figure @ f | 1.6dB @ 0.4GHz | |
| Amplification Factor | 13dB @ 0.4GHz | |
| Maximum Power Handling | 200mW | |
| DC Current Gain (hFE) @ Ic, Vce | 100 @ 10mA, 5V | |
| Maximum Collector Amps | 70mA | |
| Attachment Mounting Style | Surface Mount | |
| Component Housing Style | TO-236-3, SC-59, SOT-23-3 |
Description
Assesses resistance at forward current 1.5GHz for LED or diode testing. Has a peak collector current (Ic) of 70mA. Features a DC current gain hFE at Ic assessed at 100 @ 10mA, 5V. Provides a 1.5GHz transition frequency for smooth signal modulation. Delivers 13dB @ 0.4GHz gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Maximum power capability 200mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 13dB @ 0.4GHz for transistor specifications. Maximum collector-emitter breakdown voltage 10V.
