Attribute
Description
Manufacturer Part Number
2SC5227A-4-TB-E
Manufacturer
Description
TRANS NPN BIPO VHF-UHF CP
Manufacturer Lead Time
1 week

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 10V
Transition Freq 7GHz
Noise Figure @ f 1dB @ 1GHz
Amplification Factor 12dB
Maximum Power Handling 200mW
DC Current Gain (hFE) @ Ic, Vce 90 @ 20mA, 5V
Maximum Collector Amps 70mA
Attachment Mounting Style Surface Mount
Component Housing Style TO-236-3, SC-59, SOT-23-3

Description

Assesses resistance at forward current 7GHz for LED or diode testing. Has a peak collector current (Ic) of 70mA. Features a DC current gain hFE at Ic assessed at 90 @ 20mA, 5V. Provides a 7GHz transition frequency for smooth signal modulation. Delivers 12dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case TO-236-3, SC-59, SOT-23-3 that offers mechanical and thermal protection. Maximum power capability 200mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 12dB for transistor specifications. Maximum collector-emitter breakdown voltage 10V.