Attribute
Description
Manufacturer Part Number
LPT16ED
Description
TRANSISTOR NPN BIPOLAR SIGE
Manufacturer Lead Time
18 weeks

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 4V
Transition Freq 16GHz
Noise Figure @ f -
Amplification Factor 5.2dB
Maximum Power Handling 250mW
DC Current Gain (hFE) @ Ic, Vce 50 @ 20mA, 2V
Maximum Collector Amps 80mA
Attachment Mounting Style Surface Mount
Component Housing Style Die

Description

Assesses resistance at forward current 16GHz for LED or diode testing. Has a peak collector current (Ic) of 80mA. Features a DC current gain hFE at Ic assessed at 50 @ 20mA, 2V. Provides a 16GHz transition frequency for smooth signal modulation. Delivers 5.2dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case Die that offers mechanical and thermal protection. Maximum power capability 250mW for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 5.2dB for transistor specifications. Maximum collector-emitter breakdown voltage 4V.