Attribute
Description
Manufacturer Part Number
SD1728
Manufacturer
Description
TRANSISTOR NPN RF HF SSB M177
Manufacturer Lead Time
55 weeks

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 55V
Transition Freq -
Noise Figure @ f -
Amplification Factor 15dB ~ 17dB
Maximum Power Handling 330W
DC Current Gain (hFE) @ Ic, Vce 23 @ 10A, 6V
Maximum Collector Amps 40A
Attachment Mounting Style Surface Mount
Component Housing Style M177

Description

Has a peak collector current (Ic) of 40A. Features a DC current gain hFE at Ic assessed at 23 @ 10A, 6V. Delivers 15dB ~ 17dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case M177 that offers mechanical and thermal protection. Maximum power capability 330W for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 15dB ~ 17dB for transistor specifications. Maximum collector-emitter breakdown voltage 55V.