Attribute
Description
Manufacturer Part Number
SD1731
Manufacturer
Description
TRANSISTOR NPN RF HF SSB M174
Manufacturer Lead Time
55 weeks

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Product Attributes

Type Description
Category
Transistor Class NPN
Max Collector-Emitter Breakdown 55V
Transition Freq -
Noise Figure @ f -
Amplification Factor 13dB
Maximum Power Handling 233W
DC Current Gain (hFE) @ Ic, Vce 15 @ 10A, 6V
Maximum Collector Amps 20A
Attachment Mounting Style Surface Mount
Component Housing Style M174

Description

Has a peak collector current (Ic) of 20A. Features a DC current gain hFE at Ic assessed at 15 @ 10A, 6V. Delivers 13dB gain to enhance signal amplification effectiveness. Mounting configuration Surface Mount for structural stability. Style of the enclosure/case M174 that offers mechanical and thermal protection. Maximum power capability 233W for safeguarding the device. Classification of transistor NPN for circuit design. Maximum Vce(on) at Vge 13dB for transistor specifications. Maximum collector-emitter breakdown voltage 55V.