Description

Organized by channel type referred to as Synchronous. Facilitates a maximum output current level set as 1V, 2V. Facilitates peak sourcing and sinking currents of 2.7A, 2.7A. Implements the driven arrangement described as Half-Bridge. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Evaluated as Automotive grade for quality control. Supports a maximum high-side voltage of 100 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. The voltage levels VIL/VIH 1V, 2V required to meet digital input/output standards. Mounting configuration Surface Mount, Wettable Flank for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -40°C ~ 150°C (TA) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 10-WFDFN Exposed Pad that offers mechanical and thermal protection. Type of package 10-DFN (3x3) that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Certification AEC-Q100 for compliance with testing or regulatory standards. Typical rise and fall duration 105ns, 46ns for signal transitions. Supplier package type 10-DFN (3x3) for component selection. Voltage requirement 8V ~ 15V for electrical specifications. Voltage supply 8V ~ 15V for device operation.