Description

Organized by channel type referred to as Independent. Facilitates a maximum output current level set as 0.8V, 2.4V. Facilitates peak sourcing and sinking currents of 4.5A, 4.5A. Implements the driven arrangement described as Low-Side. Features MOSFET (N-Channel, P-Channel) gate type suitable for efficient transistor control. Configured with Non-Inverting input type for diverse applications. The voltage levels VIL/VIH 0.8V, 2.4V required to meet digital input/output standards. Mounting configuration Surface Mount for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -40°C ~ 150°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case 8-VDFN Exposed Pad that offers mechanical and thermal protection. Type of package 8-DFN-S (6x5) that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Typical rise and fall duration 12ns, 12ns for signal transitions. Supplier package type 8-DFN-S (6x5) for component selection. Voltage requirement 4.5V ~ 18V for electrical specifications. Voltage supply 4.5V ~ 18V for device operation.