Description

Organized by channel type referred to as Independent. Facilitates a maximum output current level set as 0.8V, 2.2V. Facilitates peak sourcing and sinking currents of 3A, 4A. Implements the driven arrangement described as Half-Bridge. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 115 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. The voltage levels VIL/VIH 0.8V, 2.2V required to meet digital input/output standards. Mounting configuration Surface Mount, Wettable Flank for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -40°C ~ 165°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR)Cut Tape (CT)Digi-Reel® for safeguarding or transporting components. Style of the enclosure/case 22-VFQFN Exposed Pad that offers mechanical and thermal protection. Type of package 22-QFN (4x5) that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Supplier package type 22-QFN (4x5) for component selection. Voltage requirement 0V ~ 100V for electrical specifications. Voltage supply 0V ~ 100V for device operation.