Description

Organized by channel type referred to as Independent. Facilitates a maximum output current level set as 2.3V, -. Facilitates peak sourcing and sinking currents of 3A, 3A. Implements the driven arrangement described as Half-Bridge. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 118 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. The voltage levels VIL/VIH 2.3V, - required to meet digital input/output standards. Mounting configuration Surface Mount for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -40°C ~ 125°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 10-WDFN Exposed Pad that offers mechanical and thermal protection. Type of package 10-WSON (4x4) that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Typical rise and fall duration 430ns, 260ns for signal transitions. Supplier package type 10-WSON (4x4) for component selection. Voltage requirement 9V ~ 14V for electrical specifications. Voltage supply 9V ~ 14V for device operation.