Description

Organized by channel type referred to as Independent. Facilitates a maximum output current level set as 0.8V, 2.2 V. Facilitates peak sourcing and sinking currents of 1A, 1A. Implements the driven arrangement described as Half-Bridge. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 118 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. The voltage levels VIL/VIH 0.8V, 2.2 V required to meet digital input/output standards. Mounting configuration Surface Mount for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -40°C ~ 125°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 8-WDFN Exposed Pad that offers mechanical and thermal protection. Type of package 8-WSON (4x4) that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Typical rise and fall duration 15ns, 15ns for signal transitions. Supplier package type 8-WSON (4x4) for component selection. Voltage requirement 8V ~ 14V for electrical specifications. Voltage supply 8V ~ 14V for device operation.