Attribute
Description
Manufacturer Part Number
PE29100A-X
Manufacturer
Description
IC GATE DRVR HALF-BRIDGE DIE
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification -
Product Series Line -
IC Encapsulation Type Tape & Reel (TR)
Availability Status Obsolete
Load Drive Setup Half-Bridge
Signal Path Design Synchronous
Output Driver Count 2
Logic Gate Category MOSFET (N-Channel)
Power Supply Voltage 4V ~ 5.5V
Logic Low/High Voltage -
Peak Source/Sink Output 2A, 4A
Entry Signal Category -
Max Bootstrap High Voltage 100 V
Typical Edge Transition Time 2.5ns, 2.5ns
Ambient Temp Range -40°C ~ 125°C (TJ)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style Die
Vendor Package Type Die

Description

Organized by channel type referred to as Synchronous. Facilitates peak sourcing and sinking currents of 2A, 4A. Implements the driven arrangement described as Half-Bridge. Features MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 100 V in bootstrap applications. Mounting configuration Surface Mount for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -40°C ~ 125°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tape & Reel (TR) for safeguarding or transporting components. Style of the enclosure/case Die that offers mechanical and thermal protection. Type of package Die that preserves the integrity of the device. Product status Obsolete concerning availability and lifecycle. Typical rise and fall duration 2.5ns, 2.5ns for signal transitions. Supplier package type Die for component selection. Voltage requirement 4V ~ 5.5V for electrical specifications. Voltage supply 4V ~ 5.5V for device operation.