Description

Organized by channel type referred to as Independent. Facilitates a maximum output current level set as 1.1V, 1.9V. Facilitates peak sourcing and sinking currents of 290mA, 430mA. Implements the driven arrangement described as Half-Bridge. Features IGBT, MOSFET (N-Channel) gate type suitable for efficient transistor control. Supports a maximum high-side voltage of 600 V in bootstrap applications. Configured with Non-Inverting input type for diverse applications. The voltage levels VIL/VIH 1.1V, 1.9V required to meet digital input/output standards. Mounting configuration Surface Mount for structural stability. Total drivers 2 responsible for managing circuits or systems. Temperature range -40°C ~ 125°C (TJ) for environmental conditions impacting thermal efficiency. Type of housing Tube for safeguarding or transporting components. Style of the enclosure/case 14-SOIC (0.154", 3.90mm Width) that offers mechanical and thermal protection. Type of package 14-SO that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Typical rise and fall duration 75ns, 35ns for signal transitions. Supplier package type 14-SO for component selection. Voltage requirement 12.5V ~ 20V for electrical specifications. Voltage supply 12.5V ~ 20V for device operation.