Attribute
Description
Manufacturer Part Number
HGTG30N60B3D
Manufacturer
Description
Transistor: IGBT; 600V; 60A; 208W; TO247
Manufacturer Lead Time
1 week
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | - | |
| Max Collector-Emitter Breakdown | 600V | |
| Maximum Collector Amps | 60A | |
| Maximum Power Handling | 208W | |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 30A | |
| Entry Signal Category | Standard | |
| Attachment Mounting Style | Through Hole | |
| Component Housing Style | TO-247-3 |
Description
Has a peak collector current (Ic) of 60A. Features a DC current gain hFE at Ic assessed at 1.9V @ 15V, 30A. Configured with Standard input type for diverse applications. Mounting configuration Through Hole for structural stability. Style of the enclosure/case TO-247-3 that offers mechanical and thermal protection. Maximum power capability 208W for safeguarding the device. Maximum Vce(on) at Vge 1.9V @ 15V, 30A for transistor specifications. Maximum collector-emitter breakdown voltage 600V.
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