Attribute
Description
Manufacturer Part Number
VS-GB90DA60U
Manufacturer
Description
TRANSISTOR INSLTED GATE BIPOLAR
Manufacturer Lead Time
45 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | NPT | |
| Max Collector-Emitter Breakdown | 600V | |
| Maximum Collector Amps | 147A | |
| Maximum Power Handling | 625W | |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 100A | |
| Entry Signal Category | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | SOT-227-4 |
Description
Has a peak collector current (Ic) of 147A. Features a DC current gain hFE at Ic assessed at 2.8V @ 15V, 100A. Classified as NPT IGBT type for efficient power switching. Mounting configuration Chassis Mount for structural stability. Style of the enclosure/case SOT-227-4 that offers mechanical and thermal protection. Maximum power capability 625W for safeguarding the device. Maximum Vce(on) at Vge 2.8V @ 15V, 100A for transistor specifications. Maximum collector-emitter breakdown voltage 600V.
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