Attribute
Description
Manufacturer Part Number
VS-GB90SA120U
Manufacturer
Description
TRANSISTOR INSLTED GATE BIPOLAR
Manufacturer Lead Time
45 weeks
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Product Attributes
| Type | Description | |
|---|---|---|
| Category | ||
| IGBT Class | NPT | |
| Max Collector-Emitter Breakdown | 1200V | |
| Maximum Collector Amps | 149A | |
| Maximum Power Handling | 862W | |
| Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 75A | |
| Entry Signal Category | - | |
| Attachment Mounting Style | Chassis Mount | |
| Component Housing Style | SOT-227-4 |
Description
Has a peak collector current (Ic) of 149A. Features a DC current gain hFE at Ic assessed at 3.9V @ 15V, 75A. Classified as NPT IGBT type for efficient power switching. Mounting configuration Chassis Mount for structural stability. Style of the enclosure/case SOT-227-4 that offers mechanical and thermal protection. Maximum power capability 862W for safeguarding the device. Maximum Vce(on) at Vge 3.9V @ 15V, 75A for transistor specifications. Maximum collector-emitter breakdown voltage 1200V.
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