Attribute
Description
Manufacturer Part Number
DS24B33Q+U
Description
IC EEPROM 4KBIT 1-WIRE 6TDFN
Manufacturer Lead Time
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Product Attributes

Type Description
Category
Import Duty Classification Tariff may apply if shipping to the United States
Product Series Line -
IC Encapsulation Type Bulk
RAM Technology Category Non-Volatile
Storage Media Type EEPROM
Core Technology Platform EEPROM
Total Memory Bytes 4Kbit
Storage Layout Structure 256 x 16
Data Access Bus 1-Wire®
Timing Pulse Rate -
Memory Write Speed Word/Page -
Data Retrieval Speed 2 µs
Power Supply Voltage 2.8V ~ 5.25V
Ambient Temp Range -40°C ~ 85°C (TA)
Quality Grade Level -
Certification Qualification -
Attachment Mounting Style Surface Mount
Component Housing Style 6-WDFN Exposed Pad
Vendor Package Type 6-TDFN (3x3)

Description

Provides data access speeds of 2 µs for effective data retrieval. Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Media format EEPROM for data compatibility. Memory interface 1-Wire® for performance and connectivity. Memory configuration 256 x 16 for efficient data access. Total memory size 4Kbit for device storage capability. Memory type Non-Volatile for efficiency and compatibility. Mounting configuration Surface Mount for structural stability. Temperature range -40°C ~ 85°C (TA) for environmental conditions impacting thermal efficiency. Type of housing Bulk for safeguarding or transporting components. Style of the enclosure/case 6-WDFN Exposed Pad that offers mechanical and thermal protection. Type of package 6-TDFN (3x3) that preserves the integrity of the device. Supplier package type 6-TDFN (3x3) for component selection. Voltage requirement 2.8V ~ 5.25V for electrical specifications. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform EEPROM linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Voltage supply 2.8V ~ 5.25V for device operation.