Description

Provides data access speeds of 3.5 ns for effective data retrieval. Assesses resistance at forward current Tariff may apply if shipping to the United States for LED or diode testing. Operates at a clock frequency of 2.133 GHz. Media format DRAM for data compatibility. Memory interface Parallel for performance and connectivity. Memory configuration 512M x 32 for efficient data access. Total memory size 16Gbit for device storage capability. Memory type Volatile for efficiency and compatibility. Mounting configuration Surface Mount for structural stability. Temperature range -25°C ~ 85°C (TC) for environmental conditions impacting thermal efficiency. Type of housing Tray for safeguarding or transporting components. Style of the enclosure/case 200-TFBGA that offers mechanical and thermal protection. Type of package 200-TFBGA (10x14.5) that preserves the integrity of the device. Product status Active concerning availability and lifecycle. Supplier package type 200-TFBGA (10x14.5) for component selection. Voltage requirement 1.06V ~ 1.17V for electrical specifications. The classification for import duties Tariff may apply if shipping to the United States related to import and export transactions. The primary technology platform SDRAM - Mobile LPDDR4 linked to the product category. Maximum Vce(on) at Vge Tariff may apply if shipping to the United States for transistor specifications. Voltage supply 1.06V ~ 1.17V for device operation. Duration required to write each word or page 18ns for memory components.